Toshiba's offering to a post-NAND world comes in the form of a 480layer BiCS flash device.

Toshiba has announced a new breakthrough in the development of storage solutions: a 256Gb 48-layer BiCS FLASH device that utilizes 3-bit-per-cell triple-level cell technology. As the inventor of flash memory in 1984, it seems only logical that Toshiba is the company behind its continued evolution.

 

"Our announcement of BiCS FLASH, the industry's first 48-layer 3D technology, is very significant in that we are enabling a competitive, smooth migration to 3D flash memory – to support the storage market's demand for ever-increasing densities."-- Scott Nelson, Senior VP TAEC's Memory Business Unit

BiCS (Bit Cost Scalable) flash technology is the future of the post-NAND memory world, and its memory cells can be formed at one time with multilayer formation and etching tech. It has far more storage than traditional NAND flash memory, greater write/erase reliability endurance, and faster write speeds. 

This innovation dramatically increases storage space in everything from smartphones to tablets. Mass production for the memory will begin in the first half of 2016.

 

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