Analog Devices HMC8205
Analog Devices’ HMC8205 is a GaN RF amplifier that provides high gain, high power, and high efficiency with an instantaneous bandwidth of 300 MHz to 6 GHz. The HMC8205 operates from a 50 V supply at 1300 mA and provides 20 dB power gain with a saturated output power of 46 dBm and 38% power added efficiency. It uses a 10-lead LDCC package with an input and output that are internally matched to 50 Ω and AC-coupled, and RF chokes on each drain, all of which simplify design by reducing the external component count. The HMC8205 is ideal for pulsed or continuous wave applications, including military jammers, radar, wireless infrastructure, and other applications.
- Instantaneous Bandwidth: 0.3 GHz to 6 GHz
- Power Supply (VDD): 50 V, 1300 mA
- High Power Gain: 20 dB
- High PSAT: 46 dBm
- High PAE: 38%
- Internal matching (50 Ω) and DC block on RFIN and RFOUT
- RF chokes on each drain
Industry Articles are a form of content that allows industry partners to share useful news, messages, and technology with All About Circuits readers in a way editorial content is not well suited to. All Industry Articles are subject to strict editorial guidelines with the intention of offering readers useful news, technical expertise, or stories. The viewpoints and opinions expressed in Industry Articles are those of the partner and not necessarily those of All About Circuits or its writers.