Designing High-Power-Density Chargers and Adapters using a GaN-HEMT-based Integrated Power Stage
White Paper Overview
Market demands continue to require smaller charger/adapter designs that support increasing power. GaN technology enables more efficient converter topologies that reduce passive components' size and count while supporting higher power densities and increased switching frequencies.
Infineon’s CoolGaN™ Integrated Power Stage (IPS) enables these performance improvements and size reductions by pairing the CoolGaN™ normally-off enhancement mode GaN switches with dedicated integrated EiceDRIVER™ gate driver into thermally enhanced QFN packages.
This whitepaper introduces CoolGaN™ IPS, and its use in high-efficiency converter topologies such as:
- active clamp flyback (ACF)
- hybrid flyback (HFB)
- half-bridge LLC
In addition, the design of a 65 W USB power delivery charger board based on the ACF converter is presented. The performance results using CoolGaN™ IPS demonstrate the benefits in a high-power-density charger and adapter design.