Exploiting GaN’s Full Potential | Recommended Gate Drive Solutions
White Paper Overview
In this white paper you will learn more about the gate drive requirements for Infineon's CoolGaN™ 600 V e-mode HEMTs. Various driving solutions are discussed, ranging from the standard RC-coupled driver to a new differential drive concept utilizing dedicated gate driver ICs. In half-bridge topologies, a hybrid configuration combining isolated and non-isolated drivers could be an exciting alternative. Practical application examples and circuits schematics complement the paper. After having read this whitepaper you will be enabled to start exploiting the full potential of GaN.
Find out more about Infineon's GaN technology. Click here.
Become a GaN expert with Infineon. Click here.