Industry White Paper

Paralleling MOSFETs in High-Current LV Drive Applications

Application Note Overview

Power MOSFETs are in most cases easy to control with the right driver. When switched in parallel, controlling the MOSFETs becomes more tricky. Despite the fact that the RDS (on) has a positive temperature coefficient, paralleling of MOSFETs is not a simple topic; an unbalanced circuit with increased losses or even destruction could be the result if it is not done properly.

This application note outlines the influences on the current balancing and provides a closer look at the switching behavior of a MOSFET as well as circuit definition for simulation and PCB.

Register below to download the application note and click HERE to find out more about Infineon's leading N-Channel Power MOSFETs 12V - 300V.

Read Application Note:

Already an AAC member? Please Click Here to login.

Fields containing * are required