Reliability of SiC Trench Based Power MOSFETs
White Paper Overview
One of the success factors of implementing SiC as a power device material is the chance to adopt many of the well-known device concepts and processing technologies from silicon. Among those are the basic device designs like vertical Schottky diodes or vertical power MOSFETs (after some detours via JFETs and BJT’s as alternative structures). Thus, many of the procedures used to verify the long-term stability of silicon devices could be transferred to SiC. Nevertheless, a deeper analysis has shown that SiC based devices require additional and different reliability tests compared to Si based ones.
This white paper provides a tutorial on the major steps required for a successful release of highly reliable SiC based products.
For more details on Infineon's SiC Technology click HERE.