Analog Devices HMC8205 GaN RF Amplifier | New Product BriefNovember 01, 2017 by Mouser Electronics
Analog Devices’ HMC8205 is a GaN RF amplifier that provides high gain, high power, and high efficiency with an instantaneous bandwidth of 300 MHz to 6 GHz.
This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.
Analog Devices HMC8205
Analog Devices’ HMC8205 is a GaN RF amplifier that provides high gain, high power, and high efficiency with an instantaneous bandwidth of 300 MHz to 6 GHz. The HMC8205 operates from a 50 V supply at 1300 mA and provides 20 dB power gain with a saturated output power of 46 dBm and 38% power added efficiency. It uses a 10-lead LDCC package with an input and output that are internally matched to 50 Ω and AC-coupled, and RF chokes on each drain, all of which simplify design by reducing the external component count. The HMC8205 is ideal for pulsed or continuous wave applications, including military jammers, radar, wireless infrastructure, and other applications.
- Instantaneous Bandwidth: 0.3 GHz to 6 GHz
- Power Supply (VDD): 50 V, 1300 mA
- High Power Gain: 20 dB
- High PSAT: 46 dBm
- High PAE: 38%
- Internal matching (50 Ω) and DC block on RFIN and RFOUT
- RF chokes on each drain
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