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ANALOG DEVICES INC. ADPA1107 GaN Broadband Power Amplifier | Featured Product Spotlight

March 01, 2022 by Mouser Electronics

This Featured Product Spotlight is part of a video series exploring the specifications, applications, and market context of new products.

ANALOG DEVICES INC. ADPA1107 GaN Broadband Power Amplifier

The Analog Devices Inc. ADPA1107 Gallium Nitride (GaN) Broadband Power Amplifier delivers 35 watts, or 45 dBm, of power.

This power amplifier benefits from the excellent power density and thermal conductivity of the wide bandgap GaN substrate, allowing for high power performance with simplified thermal management.

The ADPA1107 consists of two cascaded gain stages and has single-ended RF IN and RF OUT ports that are AC-coupled. The ports have a 50-ohm impedance over the entire operating frequency. The power amplifier can be directly inserted into a 50-ohm system without the need for external impedance matching components or AC coupling capacitors.

The ADPA1107 power amplifier operates from 4.8 to 6.0 gigahertz, features a 56.5% typical power-added efficiency (PAE), and a ±0.5 dB gain flatness from 5.4 to 6.0 gigahertz.

This GaN RF power amplifier is ideal for pulsed applications such as radar, public mobile radio, and general-purpose amplification.

The ADPA1107 is housed in a small, 40-lead, 6 mm by 6 mm, lead frame chip scale package (LFCSP) allowing it to be readily implemented in a larger system.

This device can be characterized and evaluated using the ADPA1107-EVALZ Amplifier Evaluation Board that consists of a 2-layer PCB mounted to an aluminum heat spreader that assists in thermal dissipation and mechanical support to the PCB. The mounting holes allow the heat spreader to be attached directly to a heat sink for further thermal relief.

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