New Product

Diodes Incorporated DMTH4M70SPGWQ N-Channel Enhancement Mode MOSFET | New Product Brief

November 16, 2022 by Mouser Electronics

This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.

 

 

Diodes Incorporated DMTH4M70SPGWQ N-Channel Enhancement Mode MOSFET

The Diodes Incorporated DMTH4M70SPGWQ N-Channel Enhancement Mode MOSFET features a typical on-state resistance of 0.54 milliohms at a gate drive of 10 volts with a gate charge of 117 nanocoulombs.

With an operating temperature up to 175 degrees celsius and an AEC-Q101 qualification, the N-channel enhancement mode MOSFET is offered in a PowerDI®8080-5 innovative high current, thermally efficient power package that is optimized for electric vehicle applications.

The DMTH4M70SPGWQ MOSFET facilitates designers of automotive high-power applications to maximize system efficiency while guaranteeing that power dissipation is kept to an absolute minimum.

For more information, visit Mouser.com.

 

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