Diodes Incorporated DMTH4M70SPGWQ N-Channel Enhancement Mode MOSFET | New Product Brief
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Diodes Incorporated DMTH4M70SPGWQ N-Channel Enhancement Mode MOSFET
The Diodes Incorporated DMTH4M70SPGWQ N-Channel Enhancement Mode MOSFET features a typical on-state resistance of 0.54 milliohms at a gate drive of 10 volts with a gate charge of 117 nanocoulombs.
With an operating temperature up to 175 degrees celsius and an AEC-Q101 qualification, the N-channel enhancement mode MOSFET is offered in a PowerDI®8080-5 innovative high current, thermally efficient power package that is optimized for electric vehicle applications.
The DMTH4M70SPGWQ MOSFET facilitates designers of automotive high-power applications to maximize system efficiency while guaranteeing that power dissipation is kept to an absolute minimum.
For more information, visit Mouser.com.
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