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Infineon Technologies OptiMOS 6 Power MOSFETs | New Product Brief

July 31, 2019 by Mouser Electronics

These MOSFETs utilize thin wafer technology enabling significant performance benefits for lower-cost designs.

This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.

Infineon Technologies OptiMOS 6 Power MOSFETs

Infineon Technologies OptiMOS 6 Power MOSFET 40V family utilizes thin wafer technology enabling significant performance benefits for more efficient, simpler, and lower-cost designs. 

The MOSFETs offer RDS(on) that is 30% lower than alternative products and up to a 46% improvement to figure of merit. The devices are optimized for synchronous rectification and these improvements enable higher efficiency throughout the entire operating range, avoiding the trade-off between low and high load conditions. 

The result is less paralleling and easier thermal design. OptiMOS 6 Power MOSFETs can operate at up to 175°C and are available in SuperSO8 and PQFN3 packages with current ratings up to 100A.

  • 30% lower RDS(ON)
    • As low as 0.7mΩ
  • Improved FOM
    • Qg x RDS(on) by 29%
    • Qgd x RDS(on) by 46%
  • Optimized for synchronous rectification
    • Highest system efficiency
    • Less paralleling required
  • -55°C to +175°C operating temperature range
  • Packages:
    • SuperSO8 - 5mm x 6mm
    • PQFN 3x3 - 3.3 x 3.3 mm
  • Drain current up to 100A

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