IXYS CORPORATION LSIC1MO170T0750 N-Channel SiC MOSFET | Featured Product Spotlight
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IXYS CORPORATION LSIC1MO170T0750 N-Channel SiC MOSFET
The IXYS LSIC1MO170T0750 is a 1700 volt Silicon Carbide (SiC) MOSFET optimized for high-frequency auxiliary power conversion.
This MOSFET takes advantage of the low temperature dependence and low specific on-resistance of the wide bandgap Silicon Carbide substrate and provides low switching losses and high junction temperature to higher voltage applications.
This enables highly efficient power designs allowing simpler thermal management and smaller heatsinks. The low conduction and switching losses combined with the ultra-low gate charge also provides an option to increase the switching frequency in order to reduce the size and weight of inductive elements in the design and increase further the power density.
The LSIC1MO170T0750 can be used for auxiliary power conversion in solar inverters, Switch Mode Power Supplies, Uninterruptible Power Supplies, motor drives, high voltage DC-DC converters, battery chargers, and induction heating applications.
This MOSFET features an extremely low gate charge of 11 nanocoulombs, a low output capacitance of 11.5 picofarads, and a low gate resistance of 29Ω for high-frequency switching.
These SiC MOSFETs are housed in a TO-263-7L package with extra clearance between the source and gate pins. This separated source pin reduces the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications.
The LSIC1MO170T0750 features normally-off operations at all temperatures and is both RoHS compliant and moisture level 1 rated.
For more information, visit Mouser.com
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