IXYS Gate Drivers for N-Channel MOSFETs & IGBTs | New Product Brief
This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.
IXYS Gate Drivers for N-Channel MOSFETs & IGBTs
IXYS Gate Drivers for N-Channel MOSFETs and IGBTs include high-voltage high-speed gate drivers and three-phase gate driver ICs.
These devices are designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration or a high-side and low-side configuration.
The high-voltage technology enables the high side to switch to 600 volts in a bootstrap operation. The drivers feature high pulse current buffers designed for minimum driver cross conduction.
Other features include logic inputs with 3.3 volt capability, Schmitt triggered logic inputs, and undervoltage lockout protection.
IXYS Gate Drivers for N-Channel MOSFETs and IGBTs operate over an extended temperature range of -40 to +125 degrees celsius.
For more information, visit Mouser.com.
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