Nexperia High-Voltage Switching Diodes
Nexperia BAS21TH High-Voltage Switching Diodes are designed for high-speed and general-purpose switching applications.
BAS21TH diodes are rated for operation with continuous reverse voltage up to 200V and repetitive peak reverse voltage up to 250V, with a max leakage current of 100nA. Reverse recovery takes just 50ns, enabling the diodes to be used in high-speed switching applications.
The devices are rated for operation from -55°C to +175°C and are AEC-Q101 qualified for use in automotive applications. The diodes are rated for forward current up to 200mA but can handle up to 9A peak non-repetitive pulses.
Nexperia BAS21TH diodes are housed in a small SOT-23 package that is ideal for compact designs.
- Reverse voltage (VR): 200V
- Repetitive peak reverse voltage (VRRM): 250V
- Reverse current (IR): 100nA max (VR = 200V)
- Reverse recovery time (tRR): 50ns
- Ambient temperature: -55°C to +175°C
- Max junction temperature: 175°C
- AEC-Q101 qualified
- Forward current: 200mA
- Non-repetitive peak forward current: up to 9A
- Repetitive peak forward current: 625mA
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