Nexperia PMDXB600UNEL 20V Dual N-Channel Trench MOSFET | New Product Brief
Nexperia’s PMDXB600UNEL is a 20 V dual n-channel enhancement mode MOSFET with low leakage current in an ultrasmall, ultrathin leadless surface mount package.
This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.
Nexperia’s PMDXB600UNEL is a 20 V dual n-channel enhancement mode MOSFET with low leakage current in an ultrasmall, ultrathin leadless surface mount package. The DFN package measures just 1.1 x 1.0 x 0.37 mm for a minimal footprint, and it has exposed drain pads for each FET for significantly lower thermal resistance. The FETs have ESD protection of greater than 1 kV and typical drain-source on-state resistance of 470 mΩ. The device supports continuous drain current up to 600 mA and peak drain current up to 2.5 A. Nexperia PMDX600UNEL is ideal for use as a relay driver, high-speed line driver, low-side load switch, or in switching circuits where board space and component height are restricted.
- Package: 1.1 x 1.0 x 0.37 mm DFN1010B-6
- Rth, junction to ambient: 285 K/W with 1 cm2 mounting pad
- Rth, junction to solder point: 27 K/W
- ESD Protection: >1 kV HBM
- RDSon: 470 mΩ
- ID: 600 mA max
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