NISSHINBO MICRO DEVICES NT1189GDAE3S High Linearity Low Noise Amplifier | New Product Brief
The NT1189GDAE3S High Linearity Low Noise Amplifier by Nisshinbo Micro Devices is a high-performing LNA designed to operate within the 3.3 to 5.0 Gigahertz range. Watch and learn all about their features, specs, applications, and more!
Nisshinbo NT1189GDAE3S High Linearity Low Noise Amplifier
The NT1189GDAE3S High Linearity Low Noise Amplifier, available from Mouser Electronics, by Nisshinbo Micro Devices is a high-performing LNA designed to operate within the 3.3 to 5.0 Gigahertz range. Encased in a small 6-pin DFN package, this LNA boasts impressive features including a high gain of up to 26 dB, a low noise figure, and a high output 3rd order intercept point, all encapsulated in a compact 1.6 x 1.6 x 0.397 millimeter form.
With an operational temperature range spanning from -40 to 105 degrees Celsius, it functions on 3.3 to 5.5 volts and consumes only 50 milliamps. This LNA is particularly optimized for 5G bands n77, n78, and n79, with adaptable external matching circuitry. Compliant with RoHS and halogen-free standards, Nisshinbo Micro Devices' NT1189GDAE3S High Linearity Low Noise Amplifier is well-suited for a variety of applications including 5G base stations, Distributed Antenna Systems, and Customer Premises Equipment.
For more information, visit Mouser.com.
New Industry Products are a form of content that allows industry partners to share useful news, messages, and technology with All About Circuits readers in a way editorial content is not well suited to. All New Industry Products are subject to strict editorial guidelines with the intention of offering readers useful news, technical expertise, or stories. The viewpoints and opinions expressed in New Industry Products are those of the partner and not necessarily those of All About Circuits or its writers.