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ON Semiconductor Wide Bandgap SiC Devices | New Product Brief

March 03, 2021 by Mouser Electronics

This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.

ON Semiconductor Wide Bandgap SiC Devices

ON Semiconductor’s Wide Bandgap Silicon Carbide Devices provide superior switching performance and higher reliability than silicon devices. 

ON Semiconductor silicon carbide diodes and MOSFETs that enable higher efficiency, faster switching, increased power density, lower EMI, and reduced system size and cost. The portfolio includes Schottky diodes from 650 volts to 1700 volts with high surge current capacity, no reverse recovery current, and excellent thermal performance. 

These diodes are used in multiple integrated power modules, providing designers a compact, efficient, and reliable option for applications such as energy storage systems and solar inverters. ON’s silicon carbide MOSFETs range from 900 volts to 1200 volts and combine rugged operation, high-speed switching, and low ON resistance. 

ON offers gate drivers that are optimized to drive silicon carbide MOSFETs, providing high peak output current and an extended positive voltage rating to maximize performance. 

  • Comprehensive SiC Portfolio 
    • Higher efficiency, faster switching, increased power density 
  • SiC Schottky Diodes 
    • 650V to 1700V 
    • High surge current capacity, no reverse recovery 
  • Power Modules 
    • Using ON Semiconductor SiC Diodes and IGBTs 
    • Compact, high efficiency, superior reliability 
  • SiC MOSFETs 
    • 900V to 1200V 
    • Rugged operation, high-speed switching, low ON resistance 
  • Gate Drivers for SiC MOSFETs 
    • Optimized for SiC MOSFETs 
    • 6A peak output current, extended positive voltage rating 

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