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onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs | New Product Brief

April 14, 2024 by Mouser Electronics

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs harness Silicon Carbide technology to deliver superior switching performance and reliability compared to traditional silicon MOSFETs. Watch and learn all about their features, specs, applications, and more!

 

 

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs, available from Mouser Electronics, harness Silicon Carbide technology to deliver superior switching performance and reliability compared to traditional silicon MOSFETs. These devices feature low on-state-resistance, reduced capacitances and gate charge, enhancing system efficiency, power density, and reducing EMI and system size. With attributes like high junction temperature, low gate charge, high-speed switching, and low capacitances, they offer consistent performance across various applications. Operating efficiently in a broad temperature range from -55°C to 175°C, these MOSFETs also exhibit high UIS, surge current, and avalanche capabilities. AECQ-101 qualified and RoHS compliant, they are particularly well-suited for automotive applications. onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs find diverse applications in solar boost converters, EV charging stations, 3-phase motor drives, industrial power supplies, and more.

For more information, visit Mouser.com.

 

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