TOSHIBA Automotive Small Signal MOSFET Device | Featured Product Spotlight
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TOSHIBA Automotive Small Signal MOSFET Device
Toshiba Automotive Small Signal MOSFET Devices are AEC-Q101 qualified compact body semi-power MOSFETs. Toshiba Logic-Level Gate Drive and Low Voltage Gate Drive FETs are offered in various JEDEC standard packages.
Toshiba has been steadily expanding its packaging technologies in order to optimize electrical performance, size, and thermal dissipation. The SOT-23F, for example, is a Toshiba proprietary flat-lead featured package as opposed to the existing gull-wing lead type SOT-23 package. This improves thermal dissipation through increased heat sinking contact area between the package and the Printed Circuit Board (PCB).
By combining sophisticated wafer processing and packaging techniques, Toshiba offers single and dual Pch and Nch MOSFETs in 20V~100V with Rdson as low as 11.8mOhm. The low on-resistance allows a reduction in application size while also reducing energy losses.
Through the combination of trench microfabrication technology with low-resistance packaging technology, these devices support a maximum channel temperature of +175°C and can be used extensively in automotive applications where the operating environment is demanding.
The automotive small-signal MOSFET devices support a wide range of automotive applications including but not limited to IVI and navigation systems, ADAS, battery systems, LED headlights, and BMS cell balance circuitry.
For more information, visit Mouser.com.
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