Toshiba CUHS10F60 Schottky Barrier Diode
Toshiba’s CUHS10F60 Schottky Barrier Diode is designed for high-speed switching applications with high breakdown voltage and low reverse current. The CUHS10F60 has a 60V reverse voltage rating and 6µA typical reverse current, allowing it to be used in more applications while reducing power consumption in the reversed state.
It can handle 1A average rectified current and 10A peak forward surge current, with a 0.56V forward voltage drop at 1A. The SBD is packaged in Toshiba’s new compact, thermally enhanced surface mount US2H package and can be operated at a junction temperature up to 150°C. This results in a simplified thermal design and enables the CUHS10F60 to be used in high-density designs.
- Reverse voltage (VR): 60V max
- Reverse current: 6µA at VR = 60V
- Forward current: 1A average rectified, 10A peak forward surge
- Forward voltage: 0.56V at 1A, 0.46V at 500mA
- Package: US2H/SOD-323HE, 2.5 x 1.4 x 0.6mm
- Thermal resistance: 105°C/W
New Industry Products are a form of content that allows industry partners to share useful news, messages, and technology with All About Circuits readers in a way editorial content is not well suited to. All New Industry Products are subject to strict editorial guidelines with the intention of offering readers useful news, technical expertise, or stories. The viewpoints and opinions expressed in New Industry Products are those of the partner and not necessarily those of All About Circuits or its writers.