Toshiba Schottky Barrier Diode | New Product Brief
Toshiba’s CUHS10F60 Schottky Barrier Diode is designed for high-speed switching applications with high breakdown voltage and low reverse current.
This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.
Toshiba CUHS10F60 Schottky Barrier Diode
Toshiba’s CUHS10F60 Schottky Barrier Diode is designed for high-speed switching applications with high breakdown voltage and low reverse current. The CUHS10F60 has a 60V reverse voltage rating and 6µA typical reverse current, allowing it to be used in more applications while reducing power consumption in the reversed state.
It can handle 1A average rectified current and 10A peak forward surge current, with a 0.56V forward voltage drop at 1A. The SBD is packaged in Toshiba’s new compact, thermally enhanced surface mount US2H package and can be operated at a junction temperature up to 150°C. This results in a simplified thermal design and enables the CUHS10F60 to be used in high-density designs.
- Reverse voltage (VR): 60V max
- Reverse current: 6µA at VR = 60V
- Forward current: 1A average rectified, 10A peak forward surge
- Forward voltage: 0.56V at 1A, 0.46V at 500mA
- Package: US2H/SOD-323HE, 2.5 x 1.4 x 0.6mm
- Thermal resistance: 105°C/W
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