UnitedSiC UJ4C/SC 750V Gen 4 SiC FETs | Featured Product Spotlight
This Featured Product Spotlight is part of a video series exploring the specifications, applications, and market context of new products.
UnitedSiC UJ4C/SC 750V Gen 4 SiC FETs
UnitedSiC UJ4C 750V Gen 4 Silicon Carbide FETs are based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Silicon FET to produce a normally-off SiC FET device.
Available in 18mΩ and 60mΩ options and with higher 750 V drain-source voltage ratings, these new SiC FETs deliver best-in-class Figures of Merit (FoM) with reduced on-resistance per unit area.
Switching performance and reverse recovery charge are improved, as are turn-on and turn-off losses for a given on-state resistance.
Reduction in die size results in lower output capacitance reducing stored energy Eoss, reducing hard switching losses and lower Coss, time-related for shorter delay times in high-frequency soft switching.
The standard gate-drive characteristics of the UJ4C FETs allow for a "drop-in replacement" functionality. These devices can be safely driven with standard 0V to 12V or 15V gate drive voltages. Designers can enhance system performance without the need to change gate drive voltage by replacing existing Silicon devices with the UnitedSiC UJ4C FETs.
For more information, visit Mouser.com.
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