VISHAY SiR680ADP N-Channel (D-S) MOSFET | New Product Brief
This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.
VISHAY SiR680ADP N-Channel (D-S) MOSFET
Vishay SiR680ADP N-Channel 80V MOSFETs use Vishay’s TrenchFET Gen IV technology and are optimized to increase power conversion efficiency in switching applications.
The devices have a class-leading figure of merit that is 13% lower than the next best product. They offer a combination of low RDS(on), gate charge, and output capacitance to reduce power loss by as much as 1.4W depending on operating conditions. RDS(ON) is typically 2.35mΩ, and the MOSFETs can handle up to 125A of continuous drain current and up to 300A of pulsed drain current.
The SiR680ADP is housed in a PowerPAK SO-8 package, which has the same footprint as a standard SO-8 and meets the thermal performance of the DPAK package, with the devices able to operate from -55°C to +150°C.
- 80V drain-source voltage
- Class-leading FOM: 13% lower than next best product
- Typical RDS(on): 2.35mΩ
- Drain current:
- Continuous: 125A
- Pulsed: 300A (t = 100µs)
- Package: PowerPAK SO-8
- Same footprint as standard SO-8
- Same thermal performance as DPAK
- Operating temperature range: -55°C to +150°C
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