WOLFSPEED C3M™ SiC 1200V MOSFETs | New Product Brief
This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.
WOLFSPEED C3M™ SiC 1200V MOSFETs
Cree C3M 1200V silicon carbide MOSFETs are 3rd generation silicon carbide MOSFETs that enable higher efficiency and higher density designs for renewable energy, high voltage DC/DC converters, switch-mode power supplies, and UPSs.
The MOSFETs have a rugged body diode that eliminates the need for an external diode, reducing component count and design size. The MOSFETs are easy to drive with a 15V gate drive voltage, and their low capacitance allows for very fast switching. Cree C3M 1200V silicon carbide MOSFETs also offer low on-resistance that is stable over temperature to reduce conduction losses.
They also have multiple package options, including 7-lead packages that virtually eliminate source inductance, while their ability to operate at a junction temperature up to +150°C reduces cooling requirements.
- C3M™ 3rd generation SiC MOSFET technology
- Easy to drive: +15V gate drive
- High speed switching with low capacitances
- Low Rds(on) stable over temperature
- Package options: TO-247-3, TO-263-7
- TO-263-7 virtually eliminates source inductance
- Operating junction and storage temperature: -55°C to +150°C
Visit Mouser.com for more information.
New Industry Products are a form of content that allows industry partners to share useful news, messages, and technology with All About Circuits readers in a way editorial content is not well suited to. All New Industry Products are subject to strict editorial guidelines with the intention of offering readers useful news, technical expertise, or stories. The viewpoints and opinions expressed in New Industry Products are those of the partner and not necessarily those of All About Circuits or its writers.