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WOLFSPEED C3M™ SiC 1200V MOSFETs | New Product Brief

October 27, 2020 by Mouser Electronics

This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.


Cree C3M 1200V silicon carbide MOSFETs are 3rd generation silicon carbide MOSFETs that enable higher efficiency and higher density designs for renewable energy, high voltage DC/DC converters, switch-mode power supplies, and UPSs. 

The MOSFETs have a rugged body diode that eliminates the need for an external diode, reducing component count and design size. The MOSFETs are easy to drive with a 15V gate drive voltage, and their low capacitance allows for very fast switching. Cree C3M 1200V silicon carbide MOSFETs also offer low on-resistance that is stable over temperature to reduce conduction losses. 

They also have multiple package options, including 7-lead packages that virtually eliminate source inductance, while their ability to operate at a junction temperature up to +150°C reduces cooling requirements. 

  • C3M™ 3rd generation SiC MOSFET technology 
  • Easy to drive: +15V gate drive 
  • High speed switching with low capacitances 
  • Low Rds(on) stable over temperature 
  • Package options: TO-247-3, TO-263-7 
    • TO-263-7 virtually eliminates source inductance 
  • Operating junction and storage temperature: -55°C to +150°C

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