Wolfspeed/Cree GaN HEMT | New Product Brief
This GaN HEMT operates from a 50V rail and offers a broadband solution to RF and microwave applications.
This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.
Wolfspeed/Cree GaN HEMT
Cree’s CGHV40200PP is an unmatched GaN HEMT with high gain and high bandwidth for use in a variety of RF applications, such as 2-way radios, broadband amplifiers, cellular infrastructure, and test instrumentation.
The transistor operates from a 50V rail and can be used with signals up to 3.0GHz. At 1.8GHz, the CGHV40200PP has a 21.0dB small signal gain, 16.1dB power gain, and can output up to 250W with 67% drain efficiency. The transistor has a low thermal resistance and packaged in a 4-lead flange package, with a 225°C maximum junction temperature and 150°C maximum case temperature.
The high efficiency, high gain, and wide bandwidth features make the CGHV40200PP ideal for linear and compressed amplifier circuits.
- 50V operation
- Up to 3.0GHz Operation
- High gain:
- Small signal gain: 21.0dB (at 1.8GHz)
- Power gain: 16.1dB (at 1.8GHz)
- PSAT: 250W typical
- 67% efficiency at PSAT
- 4-lead flange package
- 0.94°C/W junction to case thermal resistance
- Case operating temperature: -40°C to +150°C
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