WOLFSPEED GTVA High Power RF GaN on SiC HEMT | Featured Product SpotlightOctober 08, 2019 by Mouser Electronics
This Featured Product Spotlight is part of a video series exploring the specifications, applications, and market context of new products.
WOLFSPEED GTVA High Power RF GaN on SiC HEMT
Wolfspeed GTVA series High Power RF HEMTs are 50V HEMTs based on gallium nitride and silicon carbide technology, ideal for high power amplifiers, avionics, defense, and other applications.
The use of GaN-on-SiC provides high power density and high breakdown voltage and enables high power density. GTVA series HEMTs are available with peak output power ratings up to 890W and have a 150V drain-source breakdown voltage.
They can operate at up to 83% and provide up to 22dB of gain, and options are available for 960MHz to 1215MHz as well as 1200MHz to 1400MHz.
Wolfspeed has also made it easy to design with GTVA series HEMTs. Input matching reduces design complexity while also minimizing the total solution footprint and improving efficiency.
On the output, the HEMTs have a 10:1 load mismatch capability at all phase angles. This eliminates the need for an output isolator, which further simplifies the design and reduces its footprint.
Wolfspeed GTVA series HEMTs are offered in the compact bolt-down flange and earless flange packages, which are thermally-enhanced and have a thermal resistance as low as 0.14°C/W. The devices are also Pb-free and RoHS compliant.
To learn more about Wolfspeed’s GTVA series of High Power RF GaN on SiC HEMTs, visit Mouser.com.
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