MOSFET Performance and Packaging Innovations Shine at PCIM Europe
Offering advances in key specs and packaging options, semiconductor vendors unveiled a variety of new SiC (silicon carbide) FET and MOSFET devices at this week’s 2022 PCIM Europe event.
This week’s PCIM Europe 2022 was a busy event, chock full of a wide range of new and innovative power devices announced and on display. The SiC FET and MOSFET categories of products were well represented, with devices offering leading-edge performance specs and new packaging options.
For SiC MOSFETs in particular, the competition is fierce, but that’s nothing new for this technology space. In this article, we examine some of the FET products that were announced during PCIM Europe 2022 this week.
MOSFETs for Switched-mode Power Supplies
First off, STMicroelectronics launched the first members of its MDmesh M9 and DM9 MOSFET families. The devices are N-channel super-junction multi-drain silicon power MOSFETs. The company is targeting the devices at switched-mode power supplies used in a variety of systems, including data-center servers, 5G infrastructure gear, and flat-panel TVs.
Shown here comparing different package types, the MDmesh M9 series has lower maximum drain-source on-resistance compared to the previous technology (MDmesh M5 series). Image used courtesy of STMicroelectronics
The first two chips to roll out are the 650 V STP65N045M9 and the 600 V STP60N043DM9. The maximum RDS(on) specs for the devices are 45 mΩ for the STP65N045M9 and 43 mΩ for the STP60N043DM9. ST claims that the low RDS(on) specs maximize power density and enable designs with compact dimensions. The devices also offer low gate charge (Qg), typically 80 nC at 400 V drain voltage.
Turn-on and turn-off switching losses are lower than the company’s earlier MDmesh M5 and M6/DM6 chips. That’s thanks to a gate threshold voltage (VGS(th)) of 3.7 V (typical) for the STP65N045M9 and 4.0 V (typ.) for the STP60N043DM9. Also featured on both the MDmesh M9 and DM9 series is very low reverse recovery charge (Qrr) and reverse recovery time (Trr).
The company believes that those specs help boost efficiency and switching performance. The Trr is the time that current flows in the reverse direction when the forward current instantaneously switches directions because of residual stored charge.
It claims that devices based on the MDmesh DM9 technology are extremely rugged, with dv/dt capability up to 120 V/ns at 400 V. ST’s says the STP65N045M9 and STP60N043DM9 are in production in TO-220 power packages and will be available at distributors by the end of Q2 2022.
MOSFETs with Fast Reverse Recovery Time
Also out with new super junction MOSFETs, ROHM has added seven new devices to its PrestoMOS family. Called the R60 VNx series, these 600 V super junction MOSFETs are also notable for their low Trr.
The series is aimed at power circuitry in a variety of system designs including servers, electric vehicle (EV) charging, and base stations. Product designs such as motor drives in white goods are likewise suited for these MOSFETs, says the company.
The R60 VNx series is designed for EV chargers, servers, and for motor drives in white goods. Image used courtesy of ROHM
According to ROHM, the R60 VNx series of MOSFETs leverages the company’s latest processes to reduce RDS(on) per unit area. That reduction usually comes with a trade-off against the Trr spec. Despite that, ROHM says it has achieved up to 20% lower RDS(on) compared to equivalent standard products in a TO-220FM package, with a Trr of 105 ns.
ROHM plans to expand its super junction MOSFET offering with products featuring lower noise performance. More details on the R60 VNx series are available in an article earlier this week on EE Power, All About Circuits’ sister website.
1200 V SiC FET for 800 V Electric Car Chargers
For its part, Qorvo (formerly UnitedSiC) announced six members of its Gen 4 series of 1200 V Silicon SiC FETs. The company claims that the new UF4C/SC series of 1200 V Gen 4 SiC FETs are well suited for mainstream 800 V bus architectures in onboard chargers for EVs, industrial battery chargers, industrial power supplies, and DC/DC solar inverters. Other applications include welding machines, uninterruptible power supplies (UPS), and induction heating applications.
The Qorvo UF4C/SC Gen 4 series of SiC FETs are available with 23 mΩ, 30 mΩ, 53 mΩ, and 70 mΩ RDS(on) options. Image used courtesy of Qorvo
The RDS(on) options for the Gen 4 series include 23 mΩ, 30 mΩ, 53 mΩ, and 70 mΩ. The devices are provided in industry-standard 4-lead Kelvin source TO-247 packages. In addition to the TO-247 configuration, the 53 mΩ and 70 mΩ devices also have a TO-247 3-lead package option.
Qorvo claims that the new UF4C/SC series provides best-in-class SiC FET “figures of merit.” For a more detailed look at the UF4/SC, see yesterday’s article about the devices on EE Power.
650 V SiC MOSFET in TOLL Package
Packaging innovation is the focus of Onsemi’s latest MOSFET offering. At PCIM Europe this week, the company announced what it claims is the industry’s first TO-Leadless (TOLL) packaged SiC MOSFET. Until recently, many SiC devices were supplied in D2PAK 7-lead packages requiring a larger footprint.
A TOLL package measures a scant 9.90 mm x 11.68 mm, which is 30% less PCB area than a D2PAK package. Its profile (height) is 2.30 mm, making the total volume 60% less than a D2PAK package, says Onsemi. The company also points out that the TOLL package has better thermal performance and lower package inductance (2 nH) than a D2PAK 7-lead device.
The NTBL045N065SC1’s TOLL package measures a scant 9.90 mm x 11.68 mm x 2.30 mm. Image used courtesy of Onsemi
Onsemi’s first SiC MOSFET offered in the TOLL package is the NTBL045N065SC1. The device is aimed at demanding applications such as switch-mode power supplies, server and telecom power supplies, solar inverters, UPS, and energy storage systems.
The NTBL045N065SC1 boasts a VDSS rating of 650 V and a RDS(on) (typ.) of 33 mΩ and a maximum drain current (ID) of 73 A. Built on wide bandgap (WBG) SiC technology, the device offers a maximum operating temperature of 175°C.
Tip of the MOSFET Iceberg
These new SiC FET and MOSFET offerings are only a snapshot of the sum total of power devices announced at PCIM Europe this week, but the trend is clear. Semiconductor suppliers in this field are making advances across many fronts, including RDS(on), packaging innovations, Trr, and more.