Augmenting its existing SCT3xxxxxHR series, the new AEC-Q101 qualified MOSFETs utilize a trench gate structure and are available in variants featuring either 650V or 1200V breakdown voltages.

The Challenges Posed by the Rise of the Electric Vehicle

Rohm has augmented its SCT3xxxxxHR series of automotive grade silicon carbide (SiC) MOSFETs in response to the challenges posed by the rapid introduction of electric vehicles (EVs).

 

The ROHM SCT3xxxxxHR series. Image courtesy ROHM.

 

These demands include ever-greater battery power, ever-faster charging time requirements, and additionally, higher battery voltages, which now are in the range of 800 volts.

 

Important Features of the New Automotive-Grade Silicon Carbide MOSFETs

The new devices feature drain-source breakdown voltages of either 650 volts or 1200 volts.

The 650-volt units feature drain-source on-state resistances ranging from 17 milliohms to 120 milliohms, and drain currents ranging from 21 amps to 118 amps.

 

The Inner Circuit of all members of the SCT3xxxxxHR Series. Image courtesy Rohm.

 

The members of the 650-volt breakdown voltage subset and their respective datasheets are:

The 1200-volt devices feature drain-source ON-state resistance (RDS on) ranging from 22 milliohms to 160 milliohms, and drain currents ranging from 17 amps to 95 amps.

The members of the 1200-volt breakdown voltage subset and their respective datasheets are:

In addition to their low on-resistance, all series members feature fast switching speeds and fast reverse recovery. They are also easy to operate in parallel and are simple to drive.

All members of the SCT3xxxxxHR series feature PDs from 103 watts to 427 watts, an operating temperature range of -55ºC to +175ºC, and are available in TO-247 packages. The modules feature Pb-free lead plating and are RoHS compliant.

Beyond their effectiveness in automotive applications, members of the SCT3xxxxxHR series will find wide application for use in switch mode power supplies.

 

Competing Devices

The rapid introduction of EVs has elicited the interest of semiconductor manufacturers worldwide. It is a highly active field, and here are just three of the competing devices.

  • The SCTW100N65G2AG from STMicroelectronics is an automotive-grade silicon carbide power MOSFET. It features a drain-source breakdown voltage of 650 volts, drain current up to 100 amps, and a typical drain-source on state resistance of 20 milliohms and it comes in a HiP247 package. This device, too, is AEC-Q101 qualified.
  • The NVHL080N120SC1N from On Semiconductor is another AEC-Q101 qualified SiC MOSFET. The device, with a 1200-volt drain-source breakdown voltage, has a typical drain-source ON-state resistance of 80 milliohms and a maximum drain current of 20 amps.
  • The E3M0065090D from Wolfspeed is AEC-Q100 qualified and features a minimum 900 volt breakdown voltage and a 35 amp current rating. Maximum junction temperature is 150˚C and RDS on is rated at 65 milliohms.

Have you noticed the EV market pushing other developments? Please share your expertise in the comments.

Featured image courtesy ROHM.

 

Comments

0 Comments