Industry White Papers

GaN-based Primary-side Power Switches Extend Power Range of Innoswitch3 ICs

September 03, 2020 by Power Integrations

Learn how GaN-based PowiGaN switches help InnoSwitch ICs obtain up to 95% efficiency across the full load range and up to 100 W in enclosed adapter implementations without requiring a heatsink.

The InnoSwitch3, InnoSwitch3-Pro and LYTSwitchTM-6 families of flyback power conversion ICs are extremely efficient and eliminate the need for heatsinks in compact power supply applications such as chargers, adapters, LED ballasts and other compact or sealed systems with negligible airflow.



To deliver the power needed for higher power rapid charging, IoT connected appliances, LED lighting, and industrial applications, and to further reduce converter size, a primary power switch with lower RDS(ON) per unit area and higher conversion efficiency is required. Wide band-gap semiconductors provide lower specific RDS(ON) (on resistance per unit area) and greatly reduced switching losses, making them an ideal match for the developing market requirements.

Gallium Nitride (GaN) is a wide-bandgap semiconductor material that allows for the fabrication of switches that have very low switching losses both during turn-on and turn-off compared to their silicon counterparts. Power Integrations has developed advanced GaN Switch technology (PowiGaN) and has optimized the devices for use in our integrated power solutions. PowiGaN devices allow the InSOP-24C package to deliver much higher power levels without a heatsink while also substantially increasing the overall power supply efficiency.