Application Notes

AN5355 App Note: Mitigation Technique of the SiC MOSFET Gate Voltage Glitches with Miller Clamp

September 02, 2020 by STMicroelectronics

The superior switching capability of silicon carbide (SiC) MOSFETs, combined with the specific electrical characteristics of these power devices and parasitic elements, requires special attention on the gate drive circuit and layout design to avoid ringing and overshoot from becoming an issue.