Driving Miniaturization and Efficiency with a New Integrated GaN Half-Bridge Solution

MasterGaN1 integrates both power GaNs with RDS(ON) of 150 mΩ and 650 V drain source breakdown voltage, while the new MasterGaN2 integrates power GaNs with 650 V drain source breakdown voltage and RDS(ON) of 150 mΩ and 225 mΩ for low side and high side respectively, addressing topologies with asymmetrical half-bridge configuration, such as active clamp flyback or forward power supplies.

The session will begin with an overview of power conversion trends followed by an introduction of the MasterGaN platform. Once a high-level understanding of the product and technology has been covered, ST will begin to explore specific circuit topologies.

The webinar will feature a review of a 250 W LLC converter and its performance utilizing MasterGan. This performance analysis will focus on efficiency, switching behavior, and thermal performance.

Finally, ST will introduce some general design tips and guidelines for developing high voltage converters using MasterGaN, and conclude with an interactive Q&A session with ST's high voltage converter experts.

You will learn:

  • The advantages of using GaN technology in high voltage converter architectures
  • Benefits of integrating GaN half-bridge with gate drivers and bootstrap diode
  • Tips for designing high voltage converters with MasterGaN
  • Thermal considerations for MasterGaN

Free Session Registration

Already an AAC member? Please Click Here to login.

Fields containing * are required

SHARE