Industry White Papers

Reliability and Qualification of High-voltage CoolGaN™ GIT HEMTs

September 19, 2022 by Infineon Technologies

Drawing on Infineon’s expertise in power electronics and extensive portfolio of wide bandgap (WBG)- related IP, the high voltage (> 600 V) CoolGaN™ gallium nitride on silicon (GaN-on-Si) high electron mobility transistors (HEMTs) represent a major engineering advance.