This session introduces Infineon’s go-to IoT sensors platform for IoT device development. The kit enables the creation of new prototype ideas based on Infineon sensors including radar, environmental sensors, and others.
Emerging technologies based on Wide Band Gap (WBG) semiconductor materials enable new approaches to increase power density. At high switching frequencies, GaN HEMTs for synchronous rectifier (SR) switches have the advantages of lower charges and faster switching transitions.
Compared to the next best silicon alternatives, we quantitatively show how much better systems based on GaN power devices can be. We also provide further insight into corresponding topologies, choice of magnetics, and switching frequencies to take the full benefit of the next generation of power devices.
Drawing on Infineon’s expertise in power electronics and extensive portfolio of wide bandgap (WBG)- related IP, the high voltage (> 600 V) CoolGaN™ gallium nitride on silicon (GaN-on-Si) high electron mobility transistors (HEMTs) represent a major engineering advance.