In essence, the IGFET controls the base current of a BJT, which handles the main load current between collector and emitter. This way, there is extremely high current gain (since the insulated gate of the IGFET draws practically no current from the control circuitry), but the collector-to-emitter voltage drop during full conduction is as low as that of an ordinary BJT.
In Partnership with Würth Elektronik eiSos GmbH & Co. KG
by Duane Benson
by Duane Benson
by Jerry Twomey
today i have learnt new symbols very interesting