The 40 nm Arm Cortex-M4F device combines 256 KB flash, CAN FD, and ASIL-B positioning for NEV subsystems.
The W3510E workflow targets pre-layout modeling, EM analysis, and early UCIe and BoW validation for advanced AI infrastructure designs.
As system power requirements increase due to AI adoption everywhere, systems are continuing to migrate to 48V distribution to reduce I2R interconnect and PCB losses.
Explore the latest innovations, challenges, and future trends shaping next‑generation wearable electronics—from advanced materials to AI‑powered sensing.…
The device technology co-optimization (DTCO) methodology requires generating large numbers of layouts. This article introduces a few ways of speeding up this…
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
Silanna’s SL2001 and SL2002 laser-firing ICs integrate resonant charging and high-current drive for LiDAR and rangefinding applications.
Download the application guide to master Bode plot analysis and optimize the stability of your switching power supply designs.