Silicon carbide (SiC) - The latest breakthrough in high-voltage switching and rectification.
ST’s portfolio of silicon carbide devices incluses STPOWER SiC MOSFETs ranging from 650 to 1700 V with the industry’s highest junction temperature rating of 200 °C for more efficient and simplified designs, and STPOWER SiC diodes ranging from 600 to 1200 V which feature negligible switching losses and 15% lower forward voltage (VF) than standard silicon diodes.
ST has over 20 years experiences in SiC and is the leader in this market through dedicated product lines. ST SiC technology innovation (Gen 2 and next Gen 3) plus the complete industrilzation of new power packages has led to a strong product range for many power systems. In this webinar, ST’s engineering experts will explain the latest SiC technology with application case studies. Also, their experts will be happy to discuss further with you in the live Q&A session.
by Avnet Silica