With new improvements to magnetoresistive random-access memory (MRAM) write technology, Renesas claims to improve power consumption for Internet-of-Things (IoT) applications and push MRAM further.
January 04, 2022 by Jake Hertz
Pushing beyond the von Neumann bottleneck can be difficult for memory devices. One option is phase-change memory (PCM) which Stanford and IBM are researching for data storage and computing.
November 04, 2021 by Antonio Anzaldua Jr.
Reliability, speed, and large bandwidth per core are demanded by high-powered applications in personal computers. These are exactly what Micron's latest Crucial DDR5 memory promises to deliver.
November 01, 2021 by Abdulwaliy Oyekunle