Drawing on Infineon’s expertise in power electronics and extensive portfolio of wide bandgap (WBG)- related IP, the high voltage (> 600 V) CoolGaN™ gallium nitride on silicon (GaN-on-Si) high electron mobility transistors (HEMTs) represent a major engineering advance.
In partnership with Infineon Technologies
A stable frequency source is a common requirement for many electronic and most RF devices. Phase noise is the term used to describe measurements of the short-term frequency stability of these sources. This white paper provides a brief technical introduction to phase noise concepts as well as an overview of how phase noise is measured and reported.
In partnership with Rohde & Schwarz
Learn about the role of non-overlapping or complementary pulse width modulation (PMW) in DC motor control using an h-bridge circuit, taking into consideration PWM shoot-through and dead-time PWM.
August 29, 2022 by Jake Hertz
One effective solution to the requirements of 5G technology is the use of HLC (High-layer Count) PCB boards that integrate key features such as skip vias, POVF manufacturing, advanced raw materials, and impedance control.
November 11, 2021 by Sarah Kuang, Kinwong
The demand for better connectivity has prompted the shift to 112G PAM4, though there are many challenges like signal integrity. Taking on these challenges, Microchip unveils its latest solution.
September 09, 2021 by Jake Hertz
Working closely with ROHM Semiconductor, researchers at Osaka University have developed a device that operates in the terahertz spectrum to transmit large, uncompressed 8K videos uninterrupted within a 300 GHz bandwidth.
February 09, 2021 by Antonio Anzaldua Jr.