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Advanced IC Solutions for SiC/GaN Power Converters

Explore the IC ecosystem required to fully leverage SiC and GaN power switches for higher efficiency, faster switching, and improved density.


June 01, 2026 by Analog Devices
Topics Covered
SiC/GaN Power Converter Innovation
High-Performance Isolated Gate Drivers
Advanced Power Supply and Control Architectures
High-Speed Sensing and Signal Isolation
EV, Solar, and Energy Storage Power Applications
Integrated IC Ecosystems for High-Density Power Design

Technical Article Overview

Silicon carbide and gallium nitride power switches enable higher operating voltages, faster switching frequencies, and improved efficiency compared with traditional silicon devices. To realize those benefits, the surrounding IC ecosystem must be designed for the same performance demands.

This technical article from Analog Devices examines the gate drivers, isolated power supplies, sensing ICs, and control processors required to support next-generation SiC and GaN power converters. It addresses wide bandgap gate drive requirements, isolation challenges, fast switching behavior, voltage sensing, and system-level control for high density power designs.

Engineers designing power stages for AI server power delivery, UPS systems, high-density rectifiers, or power conversion in any application where efficiency and density matter will find this article an essential technical reference. Download now for a comprehensive overview of the IC ecosystem needed to drive SiC/GaN power converters in next-generation data center and industrial power applications.

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