CoolSiC™ Automotive Discrete Schottky Diodes
Application Note Overview
There is a lot of research ongoing in making the power semiconductors, especially those used in automotive converters, more efficient. Conventional Silicon (Si) based devices are soon approaching their theoretical limit, and therefore, wide band-gap semiconductors such as Silicon Carbide (SiC) which offer higher efficiency, are becoming the subject of intense research. A SiC crystal consists of an equal number of carbon (C) and Si atoms, with each carbon atom covalently bonded to a Si atom. SiC occurs in more than 100 different crystal structures or poly-types and 4H-SiC is the most preferred in the industry.
This document aids the user to better understand the working principles of Silicon Carbide schottky diodes, and their fundamental differences compared to a Silicon diode. It shows how a silicon carbide can bring system benefits. This enables the user to make a wise decision while choosing diodes for the application.
In this application note, explore the features and application benefits of Automotive CoolSiC™ Discrete Schottky Diodes.