Enhancing Performance, Efficiency and Safety with SiC Isolated Gate Drivers

The shift to electrical power is sweeping through all kinds of markets—including automotive, industrial, consumer, energy, and more. This white paper from onsemi examines the key role played by galvanically isolated (GI) gate drivers in optimizing silicon carbide (SiC) MOSFET performance for these evolving applications.

White Paper Overview

Today’s world is becoming more and more electrified — with some industries shifting to electric power and other traditional electrical applications using an increasing amount of electrical power. Silicon Carbide (SiC) MOSFETs have emerged as a great solution for ensuring higher efficiency and reduced system size in these transforming applications.

Galvanically isolated (GI) gate drivers are critical to getting the best efficiency and performance out of SiC MOSFETs. This paper dives into the fundamentals of MOSFETs, gate drivers, and galvanically isolated (GI) gate drivers, with a focus on their role in efficient switching and lowering costs. A comprehensive selection guide details considerations such as isolation capability, capacitance, common mode transient immunity (CMTI), and current driving capabilities. Also included is a spotlight on select onsemi high−performance GI gate drivers available for your system designs.

Download this white paper to learn how to make smart choices when it comes to adopting and designing with GI gate drivers and SiC MOSFET across industries such as automotive, industrial, consumer, solar energy, and more.