GaN Power Architectures Guide

An introduction to a new way of utilizing wide-bandgap, high-frequency gallium nitride power components to radically reduce size, volume, and switching losses.

Front-End and Isolated Conversion

Gallium Nitride Material Advantages

Intermediate and Point-of-Load Conversion

Modern Power Conversion Architectures

Silicon, SiC, and GaN Technology Selection

Vertical GaN and GaNEXUS Technologies

Guide Overview

Power-system designers are being asked to move more energy through smaller spaces while improving efficiency, transient response, thermal performance, and reliability — competing requirements that call for an architectural approach considering every conversion stage from source to load.

This guide breaks down how gallium nitride technology improves front-end conversion, isolated conversion, intermediate bus conversion, and point-of-load regulation. It weighs GaN against silicon and silicon carbide, digs into the benefits of higher switching frequencies and reduced reverse-recovery losses, and introduces onsemi's GaNEXUS portfolio, including lateral, bidirectional, integrated, and vertical GaN technologies.

Use this guide to pinpoint where GaN delivers the strongest gains in efficiency, density, and system performance.