Industry White Paper

onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

August 10, 2022 by Avnet
Topics Covered
  • SiC overview
  • Static Characteristics
  • Dynamic Characteristics
  • NCP51705 SiC Gate Driver

Application Note Overview

Silicon Carbide (SiC) technology is revolutionizing the way power applications are being designed with higher efficiencies and frequencies as well as lower switching losses and reduced board space compared to traditional MOSFETs and diodes. We’ve teamed up with onsemi to compile a toolkit of over ten resources that will help you discover the right power switching solution for your application.

In this application note from onsemi, read an overview of the key characteristics of onsemi M 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. And receive a guideline on the usage of the NCP51705 an isolated gate driver for SiC MOSFETs.