SiC Cascode JFETs: Easing the Transition from Silicon to Silicon Carbide

This white paper explores the advantages of SiC devices with an examination of onsemi’s EliteSiC Cascode JFETs. They combine a SiC JFET with a Si MOSFET to create a normally-off device that simplifies the transition from silicon to silicon carbide while maintaining compatibility with standard Si gate drivers. These devices offer key advantages such as ultra-low RDS(ON), reduced capacitance for faster switching, and improved reliability by eliminating gate oxide concerns.

White Paper Overview

Used in critical applications such as electric vehicles, energy storage, solar inverters, and data centers, Silicon Carbide (SiC) technology offers superior performance over traditional silicon devices, particularly in high-voltage and high-efficiency environments. This white paper explores how onsemi’s EliteSiC cascode JFETs simplify the transition from silicon to SiC by combining a normally-on SiC JFET with a Si MOSFET to create a high-performance, normally-off device compatible with standard Si gate drivers.

Download this white paper to discover how onsemi’s cascode JFETs overcome the limitations of conventional Si and SiC MOSFETs. It details the key advantages such as ultra-low RDS(ON), faster switching speeds due to reduced capacitance, and the elimination of gate oxide reliability concerns. These features enable compact, reliable, and energy-efficient designs across a range of high-power applications.

The paper also highlights how EliteSiC cascode JFETs enable higher power density and reduced system size by minimizing the need for bulky passive components. With proven benefits in thermal performance, switching efficiency, and system flexibility, these devices offer a compelling solution for next-generation power systems. Explore how onsemi’s innovations are shaping the future of SiC-based power electronics.