SiC MOSFETs: Gate Drive OptimizationAugust 10, 2022 by Avnet
- SiC MOSFET Characteristics
- DESAT Protection
- Turn−Off Procedure
- Discrete SiC Gate Drive
White Paper Overview
Silicon Carbide (SiC) technology is revolutionizing the way power applications are being designed with higher efficiencies and frequencies as well as lower switching losses and reduced board space compared to traditional MOSFETs and diodes. We’ve teamed up with onsemi to compile a toolkit of over ten resources that will help you discover the right power switching solution for your application.
For high−voltage switching power applications, silicon carbide or SiC MOSFETs bring notable advantages compared to traditional silicon MOSFETs and IGBTs. This paper by onsemi highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate−drive design for maximizing SiC switching performance will be described. System level considerations such as start−up, fault protection and steady state switching will also be discussed.