This presentation will demonstrate the possibility offered by GaN technology FETs matched with specific passive components to unleash system efficiency. We will center the presentation on a half-bridge topology for a simple buck or boost converter and take for example the NX-HB-GAN3R2-BSC evaluation board. The NX-HB-GAN3R2-BSC half-bridge evaluation board enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 100V E-Mode GaN FETs. The circuit is configured for synchronous rectification, in either buck or boost mode.
Furthermore, we will go through the component selection and explain the electrical and physical characteristics of the passive components used in this system to enable a high system efficiency.
Agenda:
• GaN technology and its benefits
• Overview of today’s GaN Market
• Benefit of a GaN Half-bridge for simple buck or boost converter
• Matching the right passive components to the GaN Technology
• Introduction to Hybrid Capacitors
• Importance of the type of wire used in inductors
• Conclusion