Intel and Micron Announce New Memory

July 29, 2015 by Jennifer A. Diffley

Intel and Micron have teamed up to produce the first new type of memory created in over 25 years. The non-volatile memory has speeds up to 1,000 times faster than NAND.

The non-volatile memory is the first new type of memory created in 25 years and has speeds up to 1,000 times faster than NAND.

The IoT will forever change the way we interact with our devices and the way devices interact with each other, but it puts considerable strain on the processors and memory responsible for storing and analyzing the influx of data. Instead of relying on improving old categories of memory like NAND, Micron and Intel have teamed up to create an entirely new type of non-volatile memory. The new 3D XPoint nonvolatile memory is up to 1,000 times faster than NAND and 10 times denser than conventional memory.

A close-up of a 3D Xpoint wafer. 

"This new class of non-volatile memory is a revolutionary technology that allows for quick access to enormous data sets and enables entirely new applications."- Mark Adams, President of Micron.

The 3D Xpoint is the culmination of over a decade of research and innovations. It was created by using transistor-less cross point architecture to create a three-dimensional checkerboard in which memory cells sit at the intersection of word lines and bit lines. This allows cells to be addressed individually, which means data can be written and read in smaller sizes, thereby allowing for faster read and write processes. 

This means faster analyzation in everything from genetic tracking to immersive 8D gaming. 


The new memory is a welcome innovation as the sea change of IoT is upon us. Its highly efficient cross point array structure will be the force behind the next generation of technology requiring storage, power, and speed.