Discrete Semiconductor Devices and Circuits
|Don’t just sit there! Build something!!|
Learning to mathematically analyze circuits requires much study and practice. Typically, students practice by working through lots of sample problems and checking their answers against those provided by the textbook or the instructor. While this is good, there is a much better way.
You will learn much more by actually building and analyzing real circuits, letting your test equipment provide the “answers” instead of a book or another person. For successful circuit-building exercises, follow these steps:
- Carefully measure and record all component values prior to circuit construction, choosing resistor values high enough to make damage to any active components unlikely.
- Draw the schematic diagram for the circuit to be analyzed.
- Carefully build this circuit on a breadboard or other convenient medium.
- Check the accuracy of the circuit’s construction, following each wire to each connection point, and verifying these elements one-by-one on the diagram.
- Mathematically analyze the circuit, solving for all voltage and current values.
- Carefully measure all voltages and currents, to verify the accuracy of your analysis.
- If there are any substantial errors (greater than a few percent), carefully check your circuit’s construction against the diagram, then carefully re-calculate the values and re-measure.
When students are first learning about semiconductor devices, and are most likely to damage them by making improper connections in their circuits, I recommend they experiment with large, high-wattage components (1N4001 rectifying diodes, TO-220 or TO-3 case power transistors, etc.), and using dry-cell battery power sources rather than a benchtop power supply. This decreases the likelihood of component damage.
As usual, avoid very high and very low resistor values, to avoid measurement errors caused by meter “loading” (on the high end) and to avoid transistor burnout (on the low end). I recommend resistors between 1 kΩ and 100 kΩ.
One way you can save time and reduce the possibility of error is to begin with a very simple circuit and incrementally add components to increase its complexity after each analysis, rather than building a whole new circuit for each practice problem. Another time-saving technique is to re-use the same components in a variety of different circuit configurations. This way, you won’t have to measure any component’s value more than once.
One method used to bias enhancement-mode IGFETs is drain-feedback biasing. An example is shown here:
Another method of biasing enhancement-mode IGFETs is the voltage divider technique, which should be familiar to you from your understanding of BJT amplifier circuits:
How do you think the performance of these two differently-biased circuits compare? Assuming they were both biased for the same Q-point, would there be any significant difference(s) in their signal amplifying performance? Why or why not?
Published under the terms and conditions of the Creative Commons Attribution License