Nexperia Makes Its Debut Into the SiC MOSFET Market
The new 1,200 V SiC MOSFETs are the first product of Nexperia's recent partnership with Mitsubishi Electric.
For the first time, Nexperia is developing its own SiC MOSFETs, marked by the introduction of two inaugural 1,200 V devices in three-pin packaging: the NSF040120L3A0 and NSF080120L3A. Nexperia says one of the key advantages of its new SiC MOSFETs is their relatively stable drain-to-source on-resistance (RDS(on)) over the operating temperature range of the device.
The two new SiC MOSFETs support Nexperia's broader goal to "accelerate global energy transition".
Nexperia Pushes Higher On-Resistance
According to the press release, the new devices offer “best-in-class” performance across parameters such as source-to-drain resistance stability, low body diode voltage drop, tight threshold voltage, and a balanced gate charge ratio. The primary difference between the NSF080120L3A0 and NSF040120L3A0 (datasheet linked) is the NSF080120L3A0's increased drain-to-source on-resistance at 80 mΩ instead of 40 mΩ.
The drain-to-source on-resistance has improved stability over temperature.
The two devices are also said to offer low total gate charge (QG), which in turn lowers gate drive losses. Nexperia also built immunity against parasitic turn-on by balancing the gate charge and achieving a low ratio of QGD to QGS. The company also claims that in parallel operation, the devices balance current-carrying performance under both static and dynamic conditions. This is a result of its ultra-low spread in device-to-device threshold voltage (VGS(th)) and its positive temperature coefficient. Nexperia says the MOSFETs have low body diode forward voltage (VSD) to boost efficiency while relaxing dead-time requirements for free-wheel operation and asynchronous rectification.
The devices are available in a through-hole package.
Additionally, the datasheets indicate the drain-to-source on-resistance is relatively stable over temperature. As SiC-based devices, the NSF040120L3A0 and NSF080120L3A0 have higher electron mobility, resulting in a turn-on switching loss of about 1,400 microjoules and a turn-off switching loss of only 60 microjoules. The devices are packaged in a through-hole package, allowing for PCB and customer board mounting.
EV Charging: A Primary Target of the New SiC MOSFETs
MOSFETs can be thought of as voltage-controlled switches. MOSFET designers strive to increase the drain-to-source conductivity of these devices, implying a lower drain-to-source resistance. Drain-to-source on-resistance specifically refers to the value of resistance when the device is conducting.
A lower RDS(on) value means less power dissipation. In the ohmic region of a MOSFET, the power dissipated is proportional to the square of the current multiplied by the resistance. In turn, less power dissipated means less heat generated, requiring less cooling from the MOSFET itself.
According to Nexperia, devices like the NSF040120L3A0 and NSF080120L3A0 are especially suited to fast electric vehicle charging, which dissipates a lot of heat relative to slower charging because of higher current flow.
The First Fruits of the Nexperia-Mitsubishi Electric Partnership
Nexperia’s entry into the SiC market is significant; with the release of these new MOSFETs, customers can expect more SiC product releases down the line targeted at industrial and EV applications.
This release comes just a few weeks after Nexperia and Mitsubishi Electric joined as strategic partners to develop discrete SiC MOSFETs. The latter has an established reputation in the SiC modules industry, with some of the most well-known ones powering Japan's high-speed Shinkansen trains, often hailed for being safe, reliable, and efficient.
The NSF040120L3A0 and NSF080120L3A0 are now in production quantities, with the company teasing releases of automotive-grade MOSFETs in the future.
All images used courtesy of Nexperia.