Members of the new STMicroelectronics series feature typical VCE(sat) of 1.55 V @ IC = 40 A and are aimed at applications such as PFC (power factor correction), welding, uninterruptible power supplies, and solar inverters.
Members of the IGBT 650 V HB2 series are based on trench field-stop structure. They are optimized for applications working at a switching frequency between 16 and 60 kHz. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCEsat behavior at low current values, as well as in terms of reduced switching energy.
The IGBT 650 V HB2 series is part of STMicro’s STPOWER portfolio. According to STMicro, their reduced gate charge enables fast switching at low gate current. Outstanding thermal performance helps maximize reliability and power density,
The first available member of the family is the 40A STGWA40HP65FB2, detailed further below.
Image from STMicroelectronics
Future members of the HB2 series will offer choices of three different diode options: protection diode, half-rated diode and full-rated diode. IC current capabilities will range from 15A to 100A. You'll eventually be able to cruise through the family page in their product selection, though there's just the one entry for now.
The pioneer entry of the 650V-device family, available now, is the 40A STGWA40HP65FB2. It utilizes a diode used for protection purposes only, which is co-packaged in antiparallel fashion with the IGBT. The result is a product designed to maximize efficiency for a wide range of fast applications.
The device features minimized tail current, low thermal resistance, and a positive VCEsat temperature coefficient.
Some important electrical parameters that will be of critical interest to designers are listed below:
Table taken from the datasheet
Circuit diagram taken from the datasheet
The device conforms to the important AEC-Q101 standard. It is available in a TO-247 long leads package.
IGBT + Protection Diode = A Winning Combination
The idea of an IGBT co-packaged with a protection diode may be catching on. The two manufacturers listed below co-package them similarly to how ST does, but with a twist: an SiC Schottky diode.
- The QID1210006 from Powerex is a module containing two IGBT’s with each transistor having a reverse connected super-fast recovery free-wheel SiC (silicon carbide) Schottky diode. The device can handle as much as 100 A at 1200 V.
- The recently-announced AFGHL50T65SQDC, offered by ON Semiconductor, features a silicon-based IGBT co-packaged with an SiC Schottky barrier diode. This unit is rated for 650 V operation and able to handle continuous currents up to 100 A @ 25°C.