STMICROELECTRONICS MASTERGAN1 and MASTERGAN2 System-in-Package | Featured Product Spotlight
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STMicroelectronics MasterGaN1 and MasterGaN2 are advanced power SiPs with an integrated gate driver and two enhancement mode GaN transistors in a half bridge configuration designed for power supply applications up to 400 watts.
GaN’s benefits are widely known, enabling smaller, lighter designs with lower losses and higher efficiency, but properly designing discrete power supplies using GaN technology is complex. It requires getting the right transistors and drivers to work together and provide optimized performance, in addition to providing sensing, safety, protection, and other functions.
ST’s MasterGaN platform eliminates this complexity. The integration provided with MasterGaN power SiPs makes implementing a GaN-based power supply easy. The SiPs include two 600 volt power GaN transistors in a half-bridge configuration along with an optimized silicon gate driver, interlocking functionality to prevent cross-conduction, and an internal bootstrap diode. The devices have logic inputs that are compatible with 3.3 to 15 volt logic levels for easy interfacing with a wide range of controllers. They also have built-in undervoltage lockout as well as overtemperature protection.
MasterGaN devices also deliver high efficiency and high power density. Housed in a compact 9 by 9 by 1 millimeter QFN package, the SiPs enable chargers and power adapters up to 400 watts. The integrated GaN transistors in MasterGaN1 devices are rated at up to 10 amps of drain-source current and have 150 milliohm RDS(ON). The MasterGaN2 has the same ratings for the low side, but the high side is rated for 6.5 amps with 225 milliohm RDS(ON). The integration and performance reduces bill of materials and enables flexible, easy, and fast designs that are up to 4 times smaller and 3 times lighter than existing designs. To learn more about STMicroelectronics MasterGaN platform of power SiPs, visit Mouser.com.
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