Toshiba SSM6K Silicon N-Channel Small Signal MOSFETs | New Product Brief
Toshiba SSM6K Silicon N-Channel Small Signal MOSFETs are compact, low-profile, and designed for use in power management and high-speed switching in small, mobile devices.
This New Product Brief (NPB) is part of a video series highlighting the features, applications, and technical specs of newly-released products.
SSM6K Silicon N-Channel Small Signal MOSFETs
Toshiba SSM6K Silicon N-Channel Small Signal MOSFETs are compact, low-profile, and designed for use in power management and high-speed switching in small, mobile devices. The SSM6K are available with a VDSS range of 12 to 60 V and have RDS,ON as low as 6.5 mΩ, but still support drain power dissipation from 500 mW to 1 W. The low on-resistance reduces heat dissipation by up to 40% versus competing devices.
Multiple packages are available, including the ultra-small WCSP6C package that measures 1.5 x 1.0 x 0.5 mm with a 0.5 mm pitch. Toshiba SSM6K series of N-Channel MOSFETs are suitable for load switching applications over 10 W, including devices using USB Type-C and USB Power Delivery standards.
- VDSS: 12 V to 60 V
- Continuous drain current: Up to 15 A
- Drain power dissipation: 500 mW to 1 W
- Channel temperature: 150°C
- RDS,On: 6.5 mΩ to 400 mΩ
- Packages: UDFN6B-6, ES6-6, UF6-6, WCSP6C-6
New Industry Products are a form of content that allows industry partners to share useful news, messages, and technology with All About Circuits readers in a way editorial content is not well suited to. All New Industry Products are subject to strict editorial guidelines with the intention of offering readers useful news, technical expertise, or stories. The viewpoints and opinions expressed in New Industry Products are those of the partner and not necessarily those of All About Circuits or its writers.
